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| AOB418 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specifications). AOB418L is a Green Product ordering option. AOv and AOB418L are electrically identical. TO-263 D2-PAK Features VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 6m (VGS = 10V) RDS(ON) < 7.2m (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A C Maximum 30 12 110 68 200 40 220 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W C TA=25C G TA=100C B ID IDM IAR EAR PD PDSM TJ, TSTG TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol t 10s Steady-State Steady-State RJA RJL Typ 8.1 33 0.84 Max 12 40 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOB418 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, I D=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=30A Forward Transconductance VDS=5V, ID=30A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 85 4.9 8.4 5.9 103 0.73 1 110 2100 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 536 165 0.95 19.6 VGS=4.5V, V DS=15V, I D=30A 3.6 8 5.9 VGS=10V, VDS=15V, RL=0.5, RGEN=3 IF=30A, dI/dt=100A/s IF=30A, dI/dt=100A/s 15.9 34 20 32.5 26 6 10.5 7.2 1.5 Min 30 1 5 100 2 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on steady-state RJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOB418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 3V 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 7.5 Normalized On-Resistance 7 RDS(ON) (m) 6.5 6 5.5 5 4.5 0 10 20 30 40 50 60 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V 1.8 ID=30A VGS=10V 1.4 VGS=4.5V 1.2 VGS=2.5V ID(A) 40 125C 30 25C 20 10 0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 10V 3.5V 60 50 VDS=5V 1.6 VGS=4.5V 1 20 1.0E+02 1.0E+01 125C 16 ID=30A RDS(ON) (m) IS (A) 12 125C 8 25C 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E+00 1.0E-01 25C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOB418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 500 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Crss VDS=15V ID=30A Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss Ciss 1000 RDS(ON) limited 1ms 10ms 0.1s 1s 1 TJ(Max)=150C TA=25C 10s DC 10s 100s Power (W) 100 80 60 40 20 0 0.01 TJ(Max)=150C TA=25C 100 ID (Amps) 10 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOB418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 0.01 100 80 60 40 20 0 0.00001 120 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B) tA = L ID BV - V DD Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 120 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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